Professional wafer ALD design, easy maintenance, and operation backed by 20 years of experience.
Supports 4–8 inch wafer samples
High-Speed Manifold
Thermal, Ozone & Plasma Options
A thoughtfully engineered platform for wafer sample research and small-scale production, optimized for high-aspect-ratio samples and compatible with low-evaporation precursor processes
Fast-actuating pneumatic ALD valves with multi-zone heating eliminate cold spots and ensure repeatable millisecond precursor dosing cycles.
Compatible with standard thermal deposition and optional plasma-assisted modules for low-temperature metal oxide, nitride, and pure metal layers.
Specification table
500 °C
maximum substrate heating
4~8 in
standard wafer diameter
>4 lines
precursor delivery channels
Configure Your ALD System
Consult directly with thinfilm process specialists to review custom chamber volumes, gas delivery configurations, and specific precursor chemistries.
Angstrom Thinfilm Technologies
2825 Broadbent Business Park, Unit AAlbuquerque, NM 87107, USA
Headquarter
1120 Nimitz Ln, Foster City, CA 94404, USA