Angstrom-Dep ALD systems：Modulerized & Customerized Products

STANDARD ALD SYSTEMS & TECHNICAL SPECIFICATIONS

Angstrom-dep® systems have three base configurations：

• Single wafer ALD or single power ALD system, Angstrom-dep I；

• Both wafer and powder ALD dural ALD system, Angstrom-dep II；

• Both wafer and powder ALD with plasma function system, Angstrom-dep III；

• Modualerized design, customers can configurate depending on their needs or upgrade existing Angstrom-dep system.
  

Technical Specifications

• More than 10 years ALD experiences.

• Specialized not only thermal ALD, but also plasma assisted ALD, porous material ALD and powder ALD.

• Batched powder ALD. Powder are easily collected. ALD container are easily cleaned. Avoid contaminations among different powder samples.

• Can use corrosive precursors to do low temperature ALD, which is important for organic polymer ALD.

• Modularized design, easy to upgrade and maintenance. It is easy to add plasma function, powder ALD module, and ozone function on existing wafer ALD system.

• Drawer-design wafer holder and cabinet-type precursor department are very convenient to change wafer and precursors.

• Focused ALD system functions, reliabilities and practicality.

• Special ALD gas flow processes and ALD chamber designs based on years ALD experiences.

• System has automatic self-cleaning function, can reduce depositions on the pipelines and clogging in the worst scenario.

• Computer control operating program. Experiment parameters are saved for future references or uses. .

• Modualerized design.

• Independent wafer chamber (RT-450°C).

• Precursor compartment (with temperature control).

• Independent powder chamber (RT-350°C).

• Customerized configuration or upgrade.

• Superior powder ALD functions.

• The powder chamber equipped with perturbation system.

• Evenly dispersed powder assures homogenous ALS.

• Powder bottle removal and cleaning are quick and convenient.

• Standardized powder bottle, replace bottles for different powder samples to avoid contamination.

• Heated wafer stage, quick temperature responses.

• Single chamber structure, simple, convenient to operate and maintein.

• Drawer-type sample holder. Changing wafers by pulling out the door.

• 3” and 8” sample holders are available.

• Powder chamber is independent from wafer chamber, to avoid wafer contaminations by powders, especially nanopowders.

• Add plasma function in wafer chamber.

• Add ozone function in one of precursor lines

CUSTOMERIZED ALD SYSTEMS

Publications using Angstrom-Dep systems

The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD Applied Surface. Science Volume 566, 15 November 2021, 150684

Atomic Layer Deposition of l-Alanine Polypeptide J. Am. Chem. Soc. 2014, 136, 45, 15821–15824

Ultra-thin enzymatic liquid membrane for CO2 separation and capture Nature Communications volume 9, Article number: 990 (2018)

Study on electrochemical performance of multi-wall carbon nanotubes coated by iron oxide nanoparticles as advanced electrode materials for supercapacitors Vacuum Volume 143, September 2017, Pages 371-379

Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films Appl. Phys. Lett. 116, 211601 (2020)

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces 2019 Chinese Phys. B 28 026801

Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition ACS Appl. Mater. Interfaces 2019, 11, 38, 35382–35388

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer DepositionActa Metallurgica Sinica (English Letters) volume 32, pages1530–1536 (2019)

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity Nanoscale Research Letters volume 12, Article number: 279 (2017)

Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells J. Mater. Chem. A, 2019,7, 25347-25354

Pt-Based Nanoreactors Derived from ZIF-67 Nanocubes on Al2O3 Films for Low-Temperature CO Oxidation ACS Appl. Nano Mater. 2022, 5, 7, 9882–9892