Designed to be affordable, convenient, and space-efficient while delivering high-end thermal ALD coating capabilities.
≤4 inch wafer samples
High-Speed Manifold
Thermal &Ozone
A well-designed platform for wafer sample research , optimized for high-aspect-ratio samples, Compatible with low-evaporation precursor processes
Fast-actuating pneumatic ALD valves with multi-zone heating eliminate cold spots and ensure repeatable millisecond precursor dosing cycles.
Compatible with standard thermal deposition of metal oxide, nitride, and pure metal layers.
Specification table
500 °C
maximum substrate heating
≤ 4 in
holder for 4 inch and smaller
3 lines
precursor delivery channels


Configure Your ALD System
Consult directly with thinfilm process specialists to review custom chamber volumes, gas delivery configurations, and specific precursor chemistries.
Angstrom Thinfilm Technologies
2825 Broadbent Business Park, Unit AAlbuquerque, NM 87107, USA
Headquarter
1120 Nimitz Ln, Foster City, CA 94404, USA

