Built with dual modular reaction chambers to support both standard substrate wafers and advanced nanomaterial powders within one integrated vacuum footprint.
Dual Reaction Chambers
High-Speed Manifold
Thermal Ozone & Plasma Options
Independent wafer and fluidizable powder chambers prevent cross-contamination while maximizing tool utilization across research and pilot manufacturing.
Fast-actuating pneumatic ALD valves with multi-zone heating eliminate cold spots and ensure repeatable millisecond precursor dosing cycles.
Compatible with standard thermal deposition and optional plasma-assisted modules for low-temperature metal oxide, nitride, and pure metal layers.
Uniqueness:
Low cost, affordable; reliable; user friendly.
Individual wafer and powder chambers in one system.
Fast loading transparent standard powder chamber（bottle）.
Special designed vale to avoid O2 and H2O for sensitive powder sample tranferring from/to glovebox.
UV activation in powder system.
Wafer
Powder
Io3/Plasma
Specification table
500 °C
maximum substrate heating
4~8 in
Easy loading drawer type wafer stage
>4 lines
precursor delivery channels
250 mL
standard transparent/exchangable powder chamber
Configure Your ALD System
Consult directly with thinfilm process specialists to review custom chamber volumes, gas delivery configurations, and specific precursor chemistries.
Angstrom Thinfilm Technologies
2825 Broadbent Business Park, Unit AAlbuquerque, NM 87107, USA
Headquarter
1120 Nimitz Ln, Foster City, CA 94404, USA